Method of fabricating a silicon photonic chip with integrated electro-optical component and lens element

ABSTRACT

Embodiments include a silicon photonic chip having a substrate, an optical waveguide on a surface of the substrate and a cavity. The cavity includes an electro-optical component, configured for emitting light perpendicular to said surface and a lens element arranged on top of the electro-optical component. The lens is configured for collimating light emitted by the electro-optical component. The chip also includes a deflector arranged on top of the lens element and configured for deflecting light collimated through the latter toward the optical waveguide. The lens element includes electrical conductors connected to the electro-optical component. The electrical conductors of the lens element may for instance include one or more through vias, one or more bottom electrical lines on a bottom side of the lens element (facing the electro-optical component), and at least one top electrical line.

DOMESTIC AND/OR FOREIGN PRIORITY

This application is a divisional of U.S. application Ser. No.14/944,301, titled “SILICON PHOTONIC CHIP WITH INTEGRATEDELECTRO-OPTICAL COMPONENT AND LENS ELEMENT” filed Nov. 18, 2015, theentire contents of which are incorporated herein by reference.

BACKGROUND

The invention relates in general to the field of silicon photonic chips,and in particular to the integration of components, e.g., electro-,electro-optical and optical components, in such chips.

The integration of active components in a silicon photonics platformposes several technical problems. Of particular interest is theintegration of laser sources made of III-V materials, as the latter areneeded for various applications. A specific type of III-V lasers (knownas VCSEL) is particularly attractive for telecommunications due to itsperformances, its small footprint and its mature technology. A key issueis to heterogeneously integrate components such as described above intoa silicon photonic chip.

SUMMARY

According to a first aspect, the present invention is embodied as asilicon photonic chip, comprising: a substrate; an optical waveguide ona surface of the substrate; and a cavity. The cavity includes anelectro-optical component, configured for emitting light perpendicularto said surface; and a lens element arranged on top of theelectro-optical component and configured for collimating light emittedby the latter. The chip further includes a deflector arranged on top ofthe lens element and configured for deflecting light collimated throughthe latter toward the optical waveguide. The lens element includeselectrical conductors connected to the electro-optical component.

In embodiments, the electrical conductors of the lens element includeone or more through vias, one or more bottom electrical lines on abottom side of the lens element (facing the electro-optical component),and at least one top electrical line.

According to another aspect, the invention is embodied as a method offabrication of a silicon photonic chip such as disclosed herein. Themethod first includes providing the substrate, the latter having theoptical waveguide on a surface thereof and further exhibiting saidcavity therein. The lens element includes the electrical conductors andthe deflector. The method further includes coupling the lens element tothe electro-optical component, so as: to connect electrical conductorsof the lens element to terminals of the electro-optical component; andto allow the lens element to collimate light emitted by theelectro-optical component, in operation. Finally, the coupled lenselement and electro-optical component is positioned in the cavity andthe deflector is arranged on top of the lens element, so as for thedeflector to deflect light collimated through the lens element towardthe optical waveguide, in operation.

Devices and related fabrication methods embodying the present inventionwill now be described, by way of non-limiting examples, and in referenceto the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a silicon photonics chip, accordingto embodiments;

FIG. 2 is a cross-sectional view of a variant to the device of FIG. 1,where drivers are mounted on the lens array, instead of being mounted ontop of the deflector, according to embodiments;

FIGS. 3A, 3B and 3C shows various three dimensional views of a lenselement coupled to an electro-optical component, as involved inembodiments;

FIG. 4 and FIG. 5 show exploded three dimensional views of a siliconphotonics chip at various stages of fabrication, according toembodiments; and

FIGS. 6A, 6B, 6C, 6D, 6E and 6F illustrate a method of fabrication of avariant to the device of FIG. 1, according to embodiments.

The accompanying drawings show simplified representations of devices orparts thereof, as involved in embodiments. Technical features depictedin the drawings are not necessarily to scale. Similar or functionallysimilar elements in the figures have been allocated the same numeralreferences, unless otherwise indicated.

DETAILED DESCRIPTION

The present invention relates to silicon photonics chips, designsthereof, and fabrication methods for facilitating the integration andthe connection of active (electro-optical) devices into integratedphotonic circuits. The integration of active components in a siliconphotonics platform poses several technical problems, a key issue beingto heterogeneously integrate such components on a photonics chip, e.g.,a silicon-on-insulator chip. One difficulty, in particular, resides inthe coupling to optical waveguides, in particular if orthogonality inthe light path is desired.

In reference to FIGS. 1-5, an aspect of the invention is firstdescribed, which concerns a silicon photonic chip 1, 1 a. The chipbasically comprises a substrate 2, i.e., a support which essentiallydetermines mechanical properties (including stability) of the chip. Thesubstrate 2 may for instance have a layeredsemiconductor-insulator-semiconductor structure, e.g., asilicon-insulator-silicon structure, and is preferably asilicon-on-insulator (SOI) wafer.

The silicon photonic chip 1, 1 a further comprises one or more opticalwaveguides 10, 10 a on a (top) surface S of the substrate 2. Opticalwaveguides 10, 10 a may for instance comprise silicon waveguide cores11, 11 a patterned on top of a lower cladding layer 13, 13 a, acting aspart of a cladding for the cores 11, 11 a. A cladding layer 12 mayotherwise be structured on top of the cores 11, 11 a, the latterpatterned in a dedicated layer 111 (see FIG. 4). Layers 12, 13 (top andlower cladding layers) are preferably obtained as buried silicon dioxidelayers, i.e., which are part of the SOI structure where a SOI wafer 2 isused.

The substrate 2 is otherwise structured so as to exhibit a cavity C1,adjacent the waveguides 10, 10 a. For example, as seen in theembodiments of FIGS. 1, 2, 4 and 5, a first cavity C1 may itself bestructured so as to exhibit a second (smaller) cavity C2 therein, suchas for a component 30 to be housed in the cavity C1, on top of anothercomponent 20 housed in the second cavity C2. Cavities are preferablydeep etched cavities, with the second cavity C2 etched in the firstcavity C1. The dimensions of the cavities shall preferably be designedto match dimensions of components to be housed therein, for compactness.For instance, the height of cavity C2 may essentially correspond to amaximal height of component 20. In addition, components 20, 30 shallpreferably closely fit, laterally (parallel to surface S) into theirrespective cavities C2, C1.

The cavity C1 notably comprises an electro-optical component 20. Thelatter is configured to emit light L perpendicular to the surface S, onwhich the waveguides 10, 10 a are arranged. The component 20 is,however, preferably arranged to fit into a smaller cavity C2 provided inthe larger cavity C1, as depicted in FIGS. 1-2.

The cavity C1 further comprises a lens element 30. The lens element mayfor instance laterally fit into the cavity C1, the latter dimensionedaccordingly. The lens element is arranged on top of the electro-opticalcomponent 20, the latter preferably fitting into the smaller cavity C2.The lens element 30 is generally designed for collimating light Lemitted by the element 20, in operation. The lens element 30 mayessentially comprise silicon.

The chip 1, 1 a further comprises a deflector 40, e.g., at least partlyarranged (i.e., buried) in the cavity C1, for compactness. The deflectoris arranged on top of the lens element 30. The deflector is configuredfor deflecting light L collimated through the lens element 30 toward theoptical waveguide 10, in operation, so as to achieve an orthogonal lightcoupling, as best seen in FIGS. 1-2. The deflector 40 may essentiallycomprise silicon.

The lens element 30 comprises electrical conductors 31-35, integratedtherewith, which connect to the electro-optical component 20. As it canbe realized, electrical conductors 31-35 integrated in the lens element30 can be fabricated beforehand, i.e., before assembling the lenselement 30 with the active component 20 and placing the resultingassembly 20, 30 in the cavity C1. Thus, integrating electricalconductors 31-35 beforehand in the lens element 30 allows to simplifythe fabrication process and further allows smaller footprints to beobtained for the chip 1, 1 a, as discussed below.

The above arrangement makes it possible to couple light L emitted fromthe active component 20, e.g., a laser such as a vertical cavity surfaceemitting laser, or VCSEL, perpendicularly to the surface S, into thehorizontal optical waveguide(s) 10. To that aim, the lens element 30used has electrical conductors 31-35 already provided thereon and/ortherein, e.g., integrated therewith, which allows more compactarrangements to be obtained.

Indeed, as such electrical conductors 31-35 need not be fabricatedexternally, that is, outside the lens element 30, the lateral footprintcan be lowered (and the fabrication facilitated). Both the activecomponent 20 and the lens element 30 can be buried in the cavity C1 (or,preferably in respective cavities C1, C2) while power can be providedfrom the top, via the electrical conductors 31-35 of the lens element30, to the active component 20, without requiring additional, external(e.g., lateral) conductors. Electrical conductors are fabricated inand/or on the lens element 30 before assembling the various components20, 30, 40, etc., instead of being fabricated afterwards. Thus, thevarious components 20, 30, 40, . . . can be fabricated independently andassembled afterwards, as explained later in more details in reference toFIGS. 6A, 6B, 6C, 6D and 6-F.

In typical embodiments, the chip 1, 1 a comprises an array of opticalwaveguides 10 and an array electro-optical components 20, as better seenin FIGS. 3-5. Each of the electro-optical components 20 is configuredfor emitting light L perpendicular to said surface S. In addition, thechip may comprise a lens array 30 comprising several lenses 38, wherethe lens array is arranged on top of the array of electro-opticalcomponents 20. Each of the lenses 38 is positioned and otherwiseconfigured for collimating light L emitted by an opposite one of theelectro-optical components 20. The deflector 40 is arranged on top ofthe lens array and may be at least partly arranged (i.e., buried) in thecavity C1, for compactness. The deflector is otherwise configured fordeflecting light L collimated through each of the lenses 38 toward arespective one of the optical waveguides 10, in operation of the device1, 1 a. The deflector 40 is a 90° deflector and preferably comprises aunique 45° angle mirror 44 (see FIGS. 1, 2 and especially FIG. 5), forsimplicity. In variants, several mirrors may be provided, each arrangedso as to deflect light collimated through a respective one of the lenses38 toward a respective one of the optical waveguides 10. Note thatsilicon-based 45° micro-reflector can be achieved as discussed, e.g., inOptics Express 17 (23), 20939 (2009), where a mirror is fabricated byetching silicon with a mixture of KOH and isopropyl alcohol to controlthe etching angle.

Note, however, that a single active component 20 may be needed, togetherwith a single lens 38 and a single coupled waveguide 10, instead ofarrays. The following description refers to an active component 20 and alens element 30, without prejudice as to the number of light sources 20and lenses 38, for the sake of generality.

The electrical conductors 31-35 of the lens element 30 may for instancecomprise one or more through vias 31, 32. The vias are typicallymetallized vias. Each of the vias 31, 32 may be connected to theelectro-optical component 20 via suitable conductors (e.g., wire bonding33, 34) and pads 26, as illustrated in FIGS. 3A-3B. Power canaccordingly be provided from the top of the lens element 30, through thevias 31, 32 provided therein, without requiring additional external(lateral) conductors, which would need to be fabricated after assemblyof the components 20, 30 into the support 2.

In embodiments, the electrical conductors 31-35 further comprise one ormore bottom electrical lines 33, 34, e.g., to enable wire bonding to theactive component 20. The bottom electrical lines 33, 34 are provided ona bottom side of the lens element 30, which bottom side faces theelectro-optical component 20, once coupled to the element 30. The vias31, 32 are connected to the electro-optical component 20 through thebottom electrical lines 33, 34. The electrical conductors 33, 34typically contacts electrical terminals 26 provided on the activeelement 20, thereby enabling power supply to the active element 30, asillustrated in FIGS. 1, 2 and 3B. By “terminals”, it is meant anysuitable type of pads or metal bumps 26 enabling electrical contact.

The electrical lines 33, 34 allows the vias 31, 32 to be off-centeredwith respect to electrical connectors of the active components. All themore, providing electrical lines 33, 34 directly on the lens elementallows to save post-assembly fabrication steps, as noted earlier.

In embodiments, the electrical conductors 31-35 further comprise one ormore top electrical lines 35 and, correspondingly, one or moreelectrical pads (i.e., bumps, etc.) 36, 36 a. The pads are connected to,e.g., positioned at an end of, a respective one of the top lines 35. Thetop electrical lines 35 and the electrical pads 36 are located on a topside of the lens element 30, opposite to the bottom side. The top sideof the lens element faces a face of the deflector 40. Such anarrangement enables external power supply from the electrical pads 36,from the top of the lens element 30. This, in turn, allows a morecompact arrangement (with a reduced lateral footprint) as no additionallines need be fabricated laterally, i.e., beside the lens element 30, toachieve the same. Note, however, that the top lines 35 can be skipped,in variants, if power is supplied to the drivers 50, which are discussedlater in detail.

As seen in FIGS. 1, 2, 4 and 5, the silicon photonic chip may furthercomprises a second lens element 60, suitably configured for focusinglight L deflected by the deflector 40 into the optical waveguides 10, ifneeded. The lens element 30 is accordingly referred to as a “first” lenselement in the following. An optical adapter 60 such as disclosed inU.S. Patent Publication No. 2014/0093207 may be used to that aim.

As said earlier, the electro-optical component 20 may preferablycomprise a laser, and, in particular, a VCSEL. Preferably, an array ofVCSELs 20 is relied upon, as illustrated in FIG. 3. Using VCSELs isparticularly advantageous for telecommunication applications, due totheir performances and small footprints. Thus, VCSEL drivers may beneeded. As seen in FIGS. 1, 2 (and also in FIGS. 6E and 6F), VCSELdrivers 50 may be provided above the lens element 30. VCSEL drivers 50can be connected to the VCSELs 20 via one or more of the electricalconductors 31-35, as explained below in detail.

Referring now specifically to FIG. 1, the chip 1 may comprise VCSELdrivers 50 provided on top of the deflector 40, above the lens element30. The deflector 40 may, in that case, comprise additional electricalconductors 41-43, so as to connect the VCSEL drivers 50 to theelectrical conductors 31-34 of the lens element 30. In particular, theadditional conductors 41-43 may comprise through vias 41-43, to reducethe lateral footprint of the device 1.

In the embodiment of FIG. 1, power can be externally supplied from thepad-conductor arrangement 36-35-36 a (see also FIGS. 3-5). Electricalcurrent reaches the drivers 50 through the vertical vias 43. The drivers50 are otherwise connected to the vias 31, 32 of the lens element 30through the vias 41, 42, see also FIG. 5.

The devices shown in FIGS. 1, 3-5 assume a same wiring scheme. Theyinvolve arrays of five VCSELs, and consistently five lenses 38 and fivecoupled waveguides 10.

Concerning now the wiring schemes depicted of FIGS. 1, 3-5: differentembodiments can be contemplated (a thing that will impact the minimalnumber of vias needed), depending on whether independent modulation ofthe VCSELs is desired or not. In simple cases, the VCSELs are driven bya static voltage bias for continuous wave lasing. E.g., modulation canbe performed in the silicon waveguides to that aim. In such cases, twovias 43 may be used for the driver to get power supply (as in preferredembodiments). Then, two more vias 41, 42 may be provided to connect thedriver chip to the VCSELs through the lens component and the deflector(as depicted in FIG. 1), which are connected together by the metal lines33, 34. In variants, the VCSELs may be independently biased (with staticbias) by the driver chip containing multiple channels. In more complexcases, the VCSELs are independently driven at high speed with anon-return to zero bias (i.e., a variable voltage bias and a staticvoltage bias are involved). In such cases, more vias are needed forsignal processing (depending on the architecture of the driver chip).I.e., two vias per VCSEL are needed for connecting to the driver chip.

The chip 1 a depicted in FIG. 2 differs from the chip of FIG. 1 in thatthe drivers 50 are mounted directly on (a top surface of) the lenselement 30, next to the deflector 40. In that case, there is no need toprovide through vias in the deflector. The design of the chip 1 a allowsfor smaller vertical dimensions, whereas the design of the chip 1 ofFIG. 1 allows the lateral footprint to be reduced. In the embodiment ofFIG. 2, power is externally supplied from the pad-conductor arrangement36-35. Electrical current reaches the drivers 50 through terminals (orpads) 36 a. The drivers 50 are otherwise connected to the vias 31, 32through terminals (or pads) 36 b, 36 c. The terminals (or pads) 36 a-36c are directly on the drivers 50. The wiring scheme on the bottomsurface of the lens element 30 can otherwise be similar to that of FIGS.1, 3-5.

Finally, the silicon photonic chips 1, 1 a may further comprise afilling material. I.e., the cavity C1 may be at least partly filled witha material so as to fix the electro-optical component 20, the lenselement 30 and the deflector 40 therein. The vacant space left in thecavities shall typically be filled with an underfill, e.g., a materialcured so as to secure the components 20-40.

Referring now to FIGS. 6A, 6B, 6C, 6D and 6-F: according to anotheraspect, the invention can be embodied as a method of fabrication of asilicon photonic chip such as described above. This method takesadvantage of the design of the components 20-40 and the substrate 2, inparticular of the electrical conductors integrated in/on the lenselement 20, whereby the components 20-40 can be simply assembled in thesubstrate 2. The method basically revolves around the following steps:

First, elements 2, 20-40 are provided. Namely, a structured substrate 2,FIG. 5A, having optical waveguides 10 already fabricated (using standingwaveguide fabrication techniques) on a surface S thereof and furtherexhibiting one or more cavities C1, C2 therein; the electro-opticalcomponent 20, with electrical conductors 31-35 already integratedtherewith, FIG. 5B; the lens element 30, FIG. 5B, the latter alreadycomprising said electrical conductors 31-35; and the deflector 40, FIG.5D.

The lens element 30 is coupled to the electro-optical component 20, FIG.5B, so as to: connect electrical conductors 33, 34 of the lens elementto terminals 26, FIG. 3B of the electro-optical component 20; and tolater allow the lens element 30 to collimate light L emitted by theelectro-optical component 20, when operating the device 1, 1 a, asexplained earlier in reference to FIGS. 1-5. Note that the wiring schemeof the elements 20-30 assumed in FIGS. 6A, 6B, 6C, 6D and 6F differ fromthe schemes assumed so far in FIGS. 1-5.

The coupled lens element 30 and electro-optical component 20 arepositioned in the cavity, FIG. 5C, e.g., such as for the activecomponent 20 to fit in to the smaller cavity C2, as explained earlier.Next, the deflector 40 is arranged on top of the lens element 30, so asfor the deflector to deflect light L collimated through the lens element30 toward the optical waveguides 10, in operation.

The electro-optical component 20 is preferably a VCSEL array and thelens element 30 a lens array 30. The coupling of the lens array 30 tothe VCSEL array 20 may notably be achieved by flip-chip bonding of aVCSEL array to the bottom surface (i.e., backside) of the lens array 30.A second lens element 60 may be inserted in the substrate 2, FIG. 5A,prior to coupling the lens element 30 to the active element 20, ifneeded.

Consistently with the embodiment of FIG. 1, the present fabricationmethods may further comprise arranging (FIG. 5E) drivers 50 for theelectro-optical component 20 on top of the deflector 40, so as for thedriver 50 to connect to electrical conductors 31-34 of the lens element30, via additional electrical conductors 41-43 of the deflector 40. Invariants, each of the deflector 40 and the VCSEL driver 50 may bemounted on the lens element 30, as described earlier in reference toFIG. 2. A filler material may be inserted and cured, to secure (at leastpart of) the components 20-50.

The above embodiments have been succinctly described in reference to theaccompanying drawings and may accommodate a number of variants. Severalcombinations of the above features may be contemplated. Examples arediscussed now.

In particularly preferred embodiments, the chip comprises a VCSEL arraysuch as depicted in FIG. 3, mounted in a cavity C2 in a III-Vsemiconductor substrate, i.e., an SOI substrate comprising opticalwaveguides and patterned with deep etched cavities used as landing padsfor the optical component 30 and the VCSEL array 20, while altogetherproviding heat sink. The lens array 38 is patterned on the top side of ahigh refractive index material 30 for collimating light from the VCSELs20. Metallized through vias 31, 32 and electrical lines 33, 34 on thebackside allow electrical contact with the VCSEL metal pads 26. A 90°deflector 40 is used, which is essentially made of silicon and comprisesa single 45° angle mirror. The deflector further comprises alignmentfeatures and metallized through vias allowing electrical contact withmetal bumps on the lens array 30 on the backside and the VCSEL drivers50 from the topside. A second lens array 60 (in silicon too) is providedfor focusing light into the silicon waveguides 10. A cured materialfills the residual space to glue all elements.

Regarding now the fabrication process, each element is fabricatedindependently and the final assembly is done step-by-step. Passivealignment can be used. The integration of VCSELs and their driversdirectly on a silicon photonics chip is scalable; compact packagings areobtained. Namely, the VCSEL array 20 is directly embedded in the siliconphotonics chip with other optical components as follows. The lens arrayis mounted on the VCSEL array and mediates both electrical and opticalsignals. Electrical vias allow electrical access from the topside. Thedeflector is directly bonded on the lens and electrical vias ensure theelectrical drive and the power supply. Flip-chip bonding of the opticalcomponents and use of appropriate mechanical features (if necessary,mechanical features patterned on the lens element and possibly the VCSELarray too can be used) will ensure an accurate positioning with respectto the size of the expanded beam waist. The different components arescalable and can be processed on a wafer-scale.

Light is emitted in the vertical plane and is coupled to devices 10 inan orthogonal plane. Using lens elements 30, 60 and a deflector 40 asdiscussed above allows to handle mode profiles at the VCSEL that arebigger than the mode confined in the waveguides. Efficiently coupling oflight from the VCSEL to silicon waveguides can be achieved. Amongstother advantages, present designs of devices offer the followingadvantages: they offer a tolerant alignment, compact packagings, theyare compatible with high-speed electronics and the head sink structure 2ensures thermal stability of the VCSELs.

The method as described above can be used in the fabrication ofintegrated circuit chips. The resulting integrated circuit chips can bedistributed by the fabricator in raw wafer form (that is, as a singlewafer that has multiple unpackaged chips), as a bare die, or in apackaged form. In the latter case the chip is mounted in a single chippackage (such as a plastic carrier, with leads that are affixed to amotherboard or other higher level carrier) or in a multichip package(such as a ceramic carrier that has either or both surfaceinterconnections or buried interconnections). In any case the chip canthen be integrated with other chips, discrete circuit elements, and/orother signal processing devices as part of either (a) an intermediateproduct, such as a motherboard, or (b) an end product. The end productcan be any product that includes integrated circuit chips, ranging fromlow-end applications to advanced computer products.

While the present invention has been described with reference to alimited number of embodiments, variants and the accompanying drawings,it will be understood by those skilled in the art that various changesmay be made and equivalents may be substituted without departing fromthe scope of the present invention. In particular, a feature(device-like or method-like) recited in a given embodiment, variant orshown in a drawing may be combined with or replace another feature inanother embodiment, variant or drawing, without departing from the scopeof the present invention. Various combinations of the features describedin respect of any of the above embodiments or variants may accordinglybe contemplated, that remain within the scope of the appended claims. Inaddition, many minor modifications may be made to adapt a particularsituation or material to the teachings of the present invention withoutdeparting from its scope. Therefore, it is intended that the presentinvention not be limited to the particular embodiments disclosed, butthat the present invention will include all embodiments falling withinthe scope of the appended claims. In addition, many other variants thanexplicitly touched above can be contemplated.

What is claimed is:
 1. A method of fabrication of a silicon photonicchip, the method comprising: providing a substrate, the substrate havingan optical waveguide on a surface thereof and further exhibiting acavity therein; providing an electro-optical component, a lens elementcomprising electrical conductors, and a deflector; coupling the lenselement to the electro-optical component, so as: to connect theelectrical conductors of the lens element to terminals of theelectro-optical component; and to allow the lens element to collimatelight emitted by the electro-optical component, in operation;positioning the coupled lens element and electro-optical component inthe cavity; and arranging the deflector on top of the lens element, soas for the deflector to deflect light collimated through the lenselement toward the optical waveguide, in operation.
 2. The method offabrication of claim 1, wherein the electro-optical component isconfigured for emitting light perpendicular to the surface of thesubstrate.
 3. The method of fabrication of claim 1, further comprisingarranging a driver for the electro-optical component on top of thedeflector, so as for the driver to connect to one or more of theelectrical conductors via one or more additional electrical conductorsof the deflector.
 4. The method of fabrication of claim 1, furthercomprising arranging a driver for the electro-optical component on thelens element, so as for the driver to connect to one or more of theelectrical conductors.
 5. The method of fabrication of claim 1, whereinthe deflector is at least partly arranged in the cavity.
 6. The methodof fabrication of claim 5, wherein the deflector is a 90° deflector. 7.The method of fabrication of claim 1, wherein the electro-opticalcomponent comprises a laser.
 8. The method of fabrication of claim 7,wherein the electro-optical component comprises a vertical cavitysurface emitting laser, or VCSEL.
 9. The method of fabrication of claim8, further comprising a VCSEL driver on top of the lens element, theVCSEL driver connected to the VCSEL via one or more of said electricalconductors.
 10. The method of fabrication of claim 9, wherein saidelectrical conductors of the lens element are first electricalconductors and the deflector comprises second electrical conductors, andwherein the VCSEL driver is arranged on top of the deflector, the VCSELdriver connected to one or more of said first electrical conductors viaone or more of said second electrical conductors.
 11. A method offabrication of a silicon photonic chip, the method comprising: providinga substrate, the substrate having an optical waveguide on a surfacethereof and further exhibiting a cavity therein; providing anelectro-optical component configured for emitting light perpendicular tothe surface of the substrate; providing a lens element arranged on topof the electro-optical component and configured for collimating lightemitted by the electro-optical component, the lens element comprisingelectrical conductors connected to terminals of the electro-opticalcomponent; positioning the coupled lens element and electro-opticalcomponent in the cavity; and arranging a deflector on top of the lenselement, so as for the deflector to deflect light collimated through thelens element toward the optical waveguide, in operation.
 12. The methodof fabrication of claim 11, the method further comprising arranging adriver for the electro-optical component on top of the deflector, so asfor the driver to connect to one or more of said electrical conductorsvia one or more additional electrical conductors of the deflector. 13.The method of fabrication of claim 11, the method further comprisingarranging a driver for the electro-optical component on the lenselement, so as for the driver to connect to one or more of saidelectrical conductors.
 14. The method of fabrication of claim 11,wherein the deflector is at least partly arranged in the cavity.
 15. Themethod of fabrication of claim 14, wherein the deflector is a 90°deflector.
 16. The method of fabrication of claim 11, wherein theelectro-optical component comprises a laser.
 17. The method offabrication of claim 16, wherein the electro-optical component comprisesa vertical cavity surface emitting laser, or VCSEL.
 18. The method offabrication of claim 17, further comprising a VCSEL driver on top of thelens element, the VCSEL driver connected to the VCSEL via one or more ofsaid electrical conductors.
 19. The method of fabrication of claim 18,wherein said electrical conductors of the lens element are firstelectrical conductors and the deflector comprises second electricalconductors, and wherein the VCSEL driver is arranged on top of thedeflector, the VCSEL driver connected to one or more of said firstelectrical conductors via one or more of said second electricalconductors.
 20. The method of fabrication of claim 18, furthercomprising mounting each of the deflector and the VCSEL driver on thelens element.